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FQT3P20
May 2001
QFET
FQT3P20
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
TM
Features
* * * * * -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching Improved dv/dt capability
S
!
D G! S G

SOT-223
FQT Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 70C) Drain Current - Pulsed
(Note 1)
FQT3P20 -200 -0.67 -0.53 -2.7 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
150 -0.67 0.25 -5.5 2.5 0.02 -55 to +150 300
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient * Typ -Max 50 Units C/W
* When mounted on the minimum pad size recommended (PCB Mount)
(c)2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT3P20
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -200 V, VGS = 0 V VDS = -160 V, TC = 125C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -200 -------0.18 -------1 -10 -100 100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 A VGS = -10 V, ID = -0.335 A VDS = -40 V, ID = -0.335 A (Note 4) -3.0 ---2.06 0.7 -5.0 2.7 -V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---190 45 7.5 250 60 10 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -100 V, ID = -2.8 A, RG = 25
(Note 4, 5)
--------
8.5 35 12 25 6.0 1.7 2.9
25 80 35 60 8.0 ---
ns ns ns ns nC nC nC
VDS = -160 V, ID = -2.8 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -0.67 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -2.8 A, dIF / dt = 100 A/s
(Note 4)
------
---100 0.34
-0.67 -2.7 -5.0 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 500mH, IAS = -0.67A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -2.8A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
(c)2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT3P20
Typical Characteristics
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top :
10
0
-ID, Drain Current [A]
-ID , Drain Current [A]
10
0
150
10
-1
25 -55
Notes : 1. VDS = -40V 2. 250 s Pulse Test
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
VGS = - 10V 6 VGS = - 20V 4
-IDR , Reverse Drain Current [A]
RDS(on) [], Drain-Source On-Resistance
8
10
0
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
2
Note : TJ = 25
0 0 2 4 6 8
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
12 400
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
VDS = -40V VDS = -100V
-V GS , Gate-Source Voltage [V]
300
Capacitance [pF]
Ciss Coss
8
VDS = -160V
6
200
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
100
Crss
2
Note : ID = -2.8 A
0 -1 10
0 10
0
10
1
0
1
2
3
4
5
6
7
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
(c)2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT3P20
Typical Characteristics
(Continued)
1.2
2.5
-BV DSS , (Norm alized) Drain-Source Breakdown Voltage
2.0
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = -250 A
0.5
Notes : 1. VGS = -10 V 2. ID = -0.335 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
0.8 10
1
Operation in This Area is Limited by R DS(on)
-ID, Drain Current [A]
100 ms
-1
10
DC
10
-2
Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
o
10
-3
-ID, Drain Current [A]
10
0
1 ms 10 ms
100 s
0.6
0.4
0.2
10
-1
10
0
10
1
10
2
0.0 25
50
75
100
125
150
-VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
1
0 .2 0 .1 0 .0 5
N o te s : 1 . Z J C( t ) = 5 0 /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z J C( t )
10
0
0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
Z
JC
10
-1 -5 -4 -3 -2 -1 0 1 2 3
10
10
10
10
10
10
10
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
(c)2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT3P20
Gate Charge Test Circuit & Waveform
VGS
50K 12V 200nF 300nF
Same Type as DUT VDS
Qg -10V Qgs Qgd
VGS
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
td(on)
t on tr td(off)
t off tf
Vin
10%
-10V
DUT VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT IAS BVDSS VDD
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
tp
Time VDS (t)
ID (t) -10V
(c)2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT3P20
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Compliment of DUT (N-Channel)
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IS ( DUT )
IRM
di/dt IFM , Body Diode Forward Current
Vf VDS ( DUT )
Body Diode Forward Voltage Drop Body Diode Recovery dv/dt
VDD
(c)2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT3P20
Package Dimensions
SOT-223
0.08MAX MAX1.80 1.75 0.20 3.50 0.20 (0.60)
3.00 0.10
0.65 0.20
+0.04
0.06 -0.02
2.30 TYP (0.95) 4.60 0.25
0.70 0.10 (0.95) 0.25 -0.05
+0.10
(0.60)
0~
10
1.60 0.20
(0.46)
(c)2001 Fairchild Semiconductor Corporation
(0.89)
6.50 0.20
Rev. A, May 2001
7.00 0.30
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H2

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